MANUFACTURE METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To deposit gold coating on a rear face of a semiconductor wafer with a superior throughput by finishing the coating in a thin state without generating any break or crack. SOLUTION: A protective tape 24 is bonded to a semiconductor element forming face 21 of a semiconductor wafer 20 in a vacuum state with a hot melt gluing layer 25 made up of thermoplastic resin with few amount of gas discharge. The rear face of the semiconductor wafer is polished and wet-etched in this state, and a gold coating is deposited on the rear face of the semiconductor wafer. By making the coating thin while reinforcing the semiconductor wafer with the protective tape, the semiconductor wafer can be protected from warping, bent, pitching or crack. Gas discharge can be prevented in a gold coating forming step for the rear face of the semiconductor wafer, so the throughput can be improved by reducing a landing time until it is reduced in pressure to the prescribed degree of vacuum. COPYRIGHT: (C)2004,JPO&NCIPI