TRANSFER MASK BLANK, TRANSFER MASK, AND TRANSFER METHOD USING THE SAME
PROBLEM TO BE SOLVED: To attain an efficient production of a transfer mask for charged corpuscular rays including electron beams, a transfer mask for X-rays and a transfer mask for extreme ultraviolet rays by means of an existing device such as an electron beam drawing device for photomasks with imp...
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| creator | NOZUE HIROSHI IIMURA YUKIO HOGEN MORIHISA ARITSUKA YUKI SANO NAOTAKE KURIHARA MASAAKI YOSHIDA AKIRA |
| description | PROBLEM TO BE SOLVED: To attain an efficient production of a transfer mask for charged corpuscular rays including electron beams, a transfer mask for X-rays and a transfer mask for extreme ultraviolet rays by means of an existing device such as an electron beam drawing device for photomasks with improved accuracy in processing mask patterns. SOLUTION: The transfer mask and a transfer mask blank therefor are arranged such that a substrate 2 is profiled to have a substantially rectangular parallelepiped shape; an opening 3 is provided at approximately a center portion of a lower surface of the substrate 2; a self-supporting thin film m is supported at approximately a center portion of an upper surface of the substrate 2 corresponding to the opening 3 to provide a pattern region 4, a through-holes h, or absorbers or scatterers for the mask patterns are provided at the self-supporting thin film m; and the pattern region 4 and a region 5 around the pattern region 4 are in the same plane. COPYRIGHT: (C)2004,JPO&NCIPI |
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SOLUTION: The transfer mask and a transfer mask blank therefor are arranged such that a substrate 2 is profiled to have a substantially rectangular parallelepiped shape; an opening 3 is provided at approximately a center portion of a lower surface of the substrate 2; a self-supporting thin film m is supported at approximately a center portion of an upper surface of the substrate 2 corresponding to the opening 3 to provide a pattern region 4, a through-holes h, or absorbers or scatterers for the mask patterns are provided at the self-supporting thin film m; and the pattern region 4 and a region 5 around the pattern region 4 are in the same plane. 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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | TRANSFER MASK BLANK, TRANSFER MASK, AND TRANSFER METHOD USING THE SAME |
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