METHOD FOR MANUFACTURING BULK SINGLE CRYSTAL OF GALLIUM-CONTAINING NITRIDE

PROBLEM TO BE SOLVED: To obtain a bulk single crystal of a gallium-containing nitride by using supercritical ammonia. SOLUTION: A supercritical solvent containing an alkaline metal ion is prepared in an autoclave. A feed stock is dissolved in the solvent to prepare a supercritical solution to simult...

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Hauptverfasser:	GARCZYNSKI JERZY, KANBARA YASUO, SIERZPUTOWSKI LESZEK PIOTR, DORADZINSKI ROMAN MAREK, DWILINSKI ROBERT TOMASZ
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CRYSTAL GROWTH DEVICES USING STIMULATED EMISSION ELECTRICITY INORGANIC CHEMISTRY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain a bulk single crystal of a gallium-containing nitride by using supercritical ammonia. SOLUTION: A supercritical solvent containing an alkaline metal ion is prepared in an autoclave. A feed stock is dissolved in the solvent to prepare a supercritical solution to simultaneously or separately crystallize a gallium-containing nitride on the seed face. The method is carried out by using an autoclave 1 for the production of a supercritical solvent. The autoclave 1 is equipped with a convection controlling apparatus 2. The autoclave is put in a furnace unit 4 equipped with a heating apparatus 5 or a cooling apparatus 6. COPYRIGHT: (C)2004,JPO