METHOD OF FORMING POROUS MATERIAL FILM OF SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a method of forming a porous material film permitting the radical removal of a carbon residue and the generation of pores in an inorganic material film containing impurities, and a method of manufacturing a high integration semiconductor device adopting the porous ma...
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creator | JEONG HYUN DAM LEE SENREI KIN EINAN KIM JIN-SUNG |
description | PROBLEM TO BE SOLVED: To provide a method of forming a porous material film permitting the radical removal of a carbon residue and the generation of pores in an inorganic material film containing impurities, and a method of manufacturing a high integration semiconductor device adopting the porous material film. SOLUTION: There is provided a method of forming the porous material film of a semiconductor device. This method comprises the formation of a material film containing impurities reacting with a water molecule on a substrate. The substrate having the material film is cured under the conditions having a high pressure higher than atmospheric pressure and a high temperature higher than a steam atmosphere and a room temperature, so as to generate pores in the material film. COPYRIGHT: (C)2004,JPO |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2004165660A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2004165660A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2004165660A3</originalsourceid><addsrcrecordid>eNrjZLDzdQ3x8HdR8HdTcPMP8vX0c1cI8A_yDw1W8HUMcQ3ydPRRcPP08QXJB7v6ejr7-7mEOof4Bym4uIZ5OrvyMLCmJeYUp_JCaW4GJTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAjAwMTQzNTMzMDR2OiFAEApZYqgA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF FORMING POROUS MATERIAL FILM OF SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>JEONG HYUN DAM ; LEE SENREI ; KIN EINAN ; KIM JIN-SUNG</creator><creatorcontrib>JEONG HYUN DAM ; LEE SENREI ; KIN EINAN ; KIM JIN-SUNG</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method of forming a porous material film permitting the radical removal of a carbon residue and the generation of pores in an inorganic material film containing impurities, and a method of manufacturing a high integration semiconductor device adopting the porous material film. SOLUTION: There is provided a method of forming the porous material film of a semiconductor device. This method comprises the formation of a material film containing impurities reacting with a water molecule on a substrate. The substrate having the material film is cured under the conditions having a high pressure higher than atmospheric pressure and a high temperature higher than a steam atmosphere and a room temperature, so as to generate pores in the material film. COPYRIGHT: (C)2004,JPO</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040610&DB=EPODOC&CC=JP&NR=2004165660A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040610&DB=EPODOC&CC=JP&NR=2004165660A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JEONG HYUN DAM</creatorcontrib><creatorcontrib>LEE SENREI</creatorcontrib><creatorcontrib>KIN EINAN</creatorcontrib><creatorcontrib>KIM JIN-SUNG</creatorcontrib><title>METHOD OF FORMING POROUS MATERIAL FILM OF SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a method of forming a porous material film permitting the radical removal of a carbon residue and the generation of pores in an inorganic material film containing impurities, and a method of manufacturing a high integration semiconductor device adopting the porous material film. SOLUTION: There is provided a method of forming the porous material film of a semiconductor device. This method comprises the formation of a material film containing impurities reacting with a water molecule on a substrate. The substrate having the material film is cured under the conditions having a high pressure higher than atmospheric pressure and a high temperature higher than a steam atmosphere and a room temperature, so as to generate pores in the material film. COPYRIGHT: (C)2004,JPO</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDzdQ3x8HdR8HdTcPMP8vX0c1cI8A_yDw1W8HUMcQ3ydPRRcPP08QXJB7v6ejr7-7mEOof4Bym4uIZ5OrvyMLCmJeYUp_JCaW4GJTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAjAwMTQzNTMzMDR2OiFAEApZYqgA</recordid><startdate>20040610</startdate><enddate>20040610</enddate><creator>JEONG HYUN DAM</creator><creator>LEE SENREI</creator><creator>KIN EINAN</creator><creator>KIM JIN-SUNG</creator><scope>EVB</scope></search><sort><creationdate>20040610</creationdate><title>METHOD OF FORMING POROUS MATERIAL FILM OF SEMICONDUCTOR DEVICE</title><author>JEONG HYUN DAM ; LEE SENREI ; KIN EINAN ; KIM JIN-SUNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2004165660A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JEONG HYUN DAM</creatorcontrib><creatorcontrib>LEE SENREI</creatorcontrib><creatorcontrib>KIN EINAN</creatorcontrib><creatorcontrib>KIM JIN-SUNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JEONG HYUN DAM</au><au>LEE SENREI</au><au>KIN EINAN</au><au>KIM JIN-SUNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF FORMING POROUS MATERIAL FILM OF SEMICONDUCTOR DEVICE</title><date>2004-06-10</date><risdate>2004</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method of forming a porous material film permitting the radical removal of a carbon residue and the generation of pores in an inorganic material film containing impurities, and a method of manufacturing a high integration semiconductor device adopting the porous material film. SOLUTION: There is provided a method of forming the porous material film of a semiconductor device. This method comprises the formation of a material film containing impurities reacting with a water molecule on a substrate. The substrate having the material film is cured under the conditions having a high pressure higher than atmospheric pressure and a high temperature higher than a steam atmosphere and a room temperature, so as to generate pores in the material film. COPYRIGHT: (C)2004,JPO</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | METHOD OF FORMING POROUS MATERIAL FILM OF SEMICONDUCTOR DEVICE |
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