METHOD OF FORMING POROUS MATERIAL FILM OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of forming a porous material film permitting the radical removal of a carbon residue and the generation of pores in an inorganic material film containing impurities, and a method of manufacturing a high integration semiconductor device adopting the porous material film. SOLUTION: There is provided a method of forming the porous material film of a semiconductor device. This method comprises the formation of a material film containing impurities reacting with a water molecule on a substrate. The substrate having the material film is cured under the conditions having a high pressure higher than atmospheric pressure and a high temperature higher than a steam atmosphere and a room temperature, so as to generate pores in the material film. COPYRIGHT: (C)2004,JPO