METHOD AND DEVICE FOR GAS PLASMA PRODUCTION, GAS COMPOSITION FOR PLASMA PRODUCTION, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD UTILIZING IT

PROBLEM TO BE SOLVED: To provide a method and a device of remote type for producing a plasma, and a semiconductor device using the plasma and an implementation method for processes for manufacturing it. SOLUTION: A high frequency current is supplied from a power source part 45 to a plasma producing...

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Bibliographische Detailangaben
Hauptverfasser:	MIN YOUNG-MIN, KIN CHINMAN, CHOI DAE-KYU, BAE DO-IN, YO JUNSHOKU, HWANG WAN-GOO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSEGASES [GHG] CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method and a device of remote type for producing a plasma, and a semiconductor device using the plasma and an implementation method for processes for manufacturing it. SOLUTION: A high frequency current is supplied from a power source part 45 to a plasma producing and gas flowing member 43 enclosing a main magnet field forming part in coil like manner. A main magnetic field having an axis direction and an auxiliary magnetic field having a direction parallel to the axis direction are formed. A gas is made to flow through a channel having the same displacement as a line of magnetic force of the main magnetic field, and a high frequency a.c. current is applied, to produce the gas plasma. The gas plasma is supplied to a process chamber to carry out the semiconductor device manufacturing process using the gas plasma. The plasma gas is produced with high efficiency, and low-priced plasma producing gas can be used. COPYRIGHT: (C)2004,JPO