GaN BASED III-V NITRIDE SEMICONDUCTOR SWITCHING ELEMENT

PROBLEM TO BE SOLVED: To provide a switching element exhibiting a high breakdown voltage and a high switching rate and capable of high temperature operation. SOLUTION: In a semiconductor switching element comprising an anode electrode 7, a cathode electrode 8, a gate electrode 9 and a plurality of p...

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Bibliographische Detailangaben

1. Verfasser:	YOSHIDA KIYOTERU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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