GaN BASED III-V NITRIDE SEMICONDUCTOR SWITCHING ELEMENT

PROBLEM TO BE SOLVED: To provide a switching element exhibiting a high breakdown voltage and a high switching rate and capable of high temperature operation. SOLUTION: In a semiconductor switching element comprising an anode electrode 7, a cathode electrode 8, a gate electrode 9 and a plurality of p...

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Bibliographische Detailangaben
1. Verfasser: YOSHIDA KIYOTERU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a switching element exhibiting a high breakdown voltage and a high switching rate and capable of high temperature operation. SOLUTION: In a semiconductor switching element comprising an anode electrode 7, a cathode electrode 8, a gate electrode 9 and a plurality of pn junctions J1, J2and J3, a p-type semiconductor layer 3, an n-type semiconductor layer 4, a p-type semiconductor layer 5, an n-type semiconductor layer 6, and a GaN based III-V nitride semiconductor are employed. COPYRIGHT: (C)2004,JPO