SUBSTRATE TREATMENT METHOD

SUBSTRATE TREATMENT METHOD

PROBLEM TO BE SOLVED: To provide a treatment method in which the number of releases of a load-locked chamber is decreased even when a dummy wafer is used. SOLUTION: In this treatment method, the dummy wafer is housed in wafer cassettes 30a and 30b set in the load-locked chambers 16a and 16b together...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HOSHINO KATSUHIKO, MACHIDA TERUHISA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a treatment method in which the number of releases of a load-locked chamber is decreased even when a dummy wafer is used. SOLUTION: In this treatment method, the dummy wafer is housed in wafer cassettes 30a and 30b set in the load-locked chambers 16a and 16b together with a plurality of semiconductor wafers to be treated, to continuously perform treatment for the dummy wafer with treatment for the semiconductor wafer. Consequently, the change of the semiconductor wafer to be treated with the dummy wafer is not needed, and the number of releases of the load-locked chamber is decreased. COPYRIGHT: (C)2004,JPO