MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To enable a polymer remaining at the periphery of a semiconductor wafer to be subjected to ashing satisfactorily without reducing the throughput in an ashing process. SOLUTION: An ashing apparatus has a stage STG. In the stage STG, an upper surface comprises a first portion STG...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: AKAISHI MASATOSHI, YANAGIBASHI YUICHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To enable a polymer remaining at the periphery of a semiconductor wafer to be subjected to ashing satisfactorily without reducing the throughput in an ashing process. SOLUTION: An ashing apparatus has a stage STG. In the stage STG, an upper surface comprises a first portion STG1 at a periphery section and a second portion STG2 surrounded by the first portion STG1, the first portion STG1 is lower than the second portion STG2, and the diameter of the second STG2 is smaller than that of a wafer 1. The wafer 1 is placed on the stage STG so that the periphery of the rear surface of the wafer 1 is arranged on the first portion STG1 while being alienated before ashing treatment is started. COPYRIGHT: (C)2004,JPO