METHOD OF CHAMBER-CLEANING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of chamber-cleaning for removing impurities which exist on a semiconductor substrate and in a processing chamber; to provide a method for manufacturing a semiconductor device utilizing the cleaning method. SOLUTION: In the method of chamber-cleaning, the imp...

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Hauptverfasser:	PARK JI-SOON, LEE EUNG-JOON, KIM JUNG-WOOK, RI GENTOKU, HONG JIN-GI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of chamber-cleaning for removing impurities which exist on a semiconductor substrate and in a processing chamber; to provide a method for manufacturing a semiconductor device utilizing the cleaning method. SOLUTION: In the method of chamber-cleaning, the impurities on the semiconductor substrate are etched by using a plasma of a first mixed gas containing hydrogen(H2), thereafter, the processing chamber is etched by using a plasma of a second non-hydrogen mixed gas containing no hydrogen as the semiconductor substrate is removed. The hydrogen reacts to the substrate and the impurities through different reactions respectively, thereby, the selection ratios can be elevated in the cleaning process, and particles produced from the hydrogen reaction can be inhibited by utilizing the plasma of the second mixed gas. COPYRIGHT: (C)2004,JPO