PROCESS FOR FORMING GATE INSULATOR LAYER HAVING MULTIPLE DIELECTRIC CONSTANT AND MULTIPLE THICKNESS

PROBLEM TO BE SOLVED: To provide a process for forming a gate insulator layer (dielectric layer) having various dielectric constants and various equivalent oxide thicknesses (EOT) on a semiconductor substrate. SOLUTION: After a layer of high dielectric constant (high k) is formed on a semiconductor substrate, a method for introducing an element to the top of the high k layer is applied to a first region of the high k layer. During that period, a second region of the high k layer is protected by a photoresist-like matter. When it is heat-treated, the first region of the high k layer exhibits a dielectric constant and an EOT different from those of the not yet heat-treated second region of the high k layer. COPYRIGHT: (C)2004,JPO