IMAGE DETECTOR

PROBLEM TO BE SOLVED: To further improve the S/N ratio in a detector wherein an insulating layer is provided between charge detecting electrode and auxiliary electrode. SOLUTION: The radiation image detector is a solid-state detector 20 constituted of a first electroconductive layer 21; a recording...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: SHIYOUJI TAKASHI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To further improve the S/N ratio in a detector wherein an insulating layer is provided between charge detecting electrode and auxiliary electrode. SOLUTION: The radiation image detector is a solid-state detector 20 constituted of a first electroconductive layer 21; a recording photoconductive layer 22; a charge transporting layer 23; a reading photoconductive layer 24; and a second electroconductive layer 25 comprising a multiplicity of charge detecting electrodes 26 comprising filamentous elements 26a, a multiplicity of auxiliary electrodes 27 comprising filamentous elements 27a, and an insulator layer 28 provided between the charge detecting electrodes 26 and the auxiliary electrodes 27. In this image detector, the charge detecting electrodes 26 are made of a 150 nm-thick aluminum layer so that resistance across their two terminals is controlled to be not higher than 100 kΩ. COPYRIGHT: (C)2004,JPO