METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide an etching method for obtaining a highly precise and minute pattern by reducing remaining of an etching residue. SOLUTION: The etching method includes a first etching process for performing anisotropic etching until the large part of a conductive film of a flat part disappears when the conductive film having a grain boundary on a very thin dielectric film; and a second etching process for etching the conductive film of an unnecessary part by enhancing a selection ratio for the dielectric film, so as to hold a thickness of the dielectric film just below the grain boundary in a degree not reaching an interface with substrate by an oxidation species after the first etching process. COPYRIGHT: (C)2004,JPO