TRANSFER METHOD OF TRANSVERSE COATING GROWTH EPITAXY LAYER

PROBLEM TO BE SOLVED: To overcome the problems of an existing substrate such as nonconductiveness, cut difficulty, heat dissipation difficulty, and also breakage of a GaN layer, large size commercialization nonconformity and a high cost by enabling a high quality GaN layer to be transferred to vario...

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Bibliographische Detailangaben

Hauptverfasser:	LIN PEIYAN, GO YOSEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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