TRANSFER METHOD OF TRANSVERSE COATING GROWTH EPITAXY LAYER

PROBLEM TO BE SOLVED: To overcome the problems of an existing substrate such as nonconductiveness, cut difficulty, heat dissipation difficulty, and also breakage of a GaN layer, large size commercialization nonconformity and a high cost by enabling a high quality GaN layer to be transferred to various substrates. SOLUTION: The method regarding a transfer method of a transverse coating growth epitaxy layer comprises (a) a step for providing a first substrate, (b) a step for forming a first epitaxy layer on the first substrate, (c) a step for forming a mask layer on the first epitaxy layer and forming at least one pattern by etching the mask layer, (d) a step for forming a second epitaxy layer on the mask layer, (e) a step for bonding a second substrate on the second epitaxy layer and (f) a step for obtaining a second substrate having the second epitaxy layer by separating the second epitaxy layer and the first epitaxy layer by etching the mask layer. COPYRIGHT: (C)2004,JPO