GATE DIELECTRIC AND METHOD THEREFOR

GATE DIELECTRIC AND METHOD THEREFOR

PROBLEM TO BE SOLVED: To simply manufacture a CMOS device having a gate dielectric made of a high-k dielectric. SOLUTION: The CMOS gate dielectric made of the high-k metal silicates by passivating a silicon surface with nitrogen compound prior to high-k dielectric deposition is provided. Optionally,...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: COLOMBO LUIGI, ROTONDARO ANTONIO L P, BEVAN MALCOLM J
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To simply manufacture a CMOS device having a gate dielectric made of a high-k dielectric. SOLUTION: The CMOS gate dielectric made of the high-k metal silicates by passivating a silicon surface with nitrogen compound prior to high-k dielectric deposition is provided. Optionally, a silicon dioxide monolayer may be preserved at the interface. COPYRIGHT: (C)2004,JPO