HYDROGEN ION CONDUCTOR AND HYDROGEN FUEL CELL USING THE SAME

PROBLEM TO BE SOLVED: To provide a hydrogen ion conductor conducting hydrogen ion without moisture, exhibiting hydrogen storage characteristics and formed on a base board and a fuel cell made small-sized and lightweight and capable of securing stable output even in a low temperature or high temperat...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	MIYANAGA YOSHINORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a hydrogen ion conductor conducting hydrogen ion without moisture, exhibiting hydrogen storage characteristics and formed on a base board and a fuel cell made small-sized and lightweight and capable of securing stable output even in a low temperature or high temperature zone by providing the hydrogen ion conductor. SOLUTION: The hydrogen ion conductor is formed on the base board and partially contains an sp2 bonding crystal and a functional group having high affinity to hydrogen ion is introduced in the grain boundary part and the inside part of the sp2 bonding crystal and an angle between the base board face and the sp2 bond face is 60-120°. COPYRIGHT: (C)2004,JPO