HETERO-JUNCTION BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a hetero-junction bipolar transistor having a base collector mesa having a stable shape, and to provide a method for manufacturing it. SOLUTION: A sub-collector mesa comprising a sub-collector layer 21, a base collector mesa comprising a collector layer 22, a gray dead layer 23, a base layer 24, and an emitter layer 25, and an emitter mesa comprising an emitter contact layer 26 are formed on a (100) surface of a substrate 10 so that a DHBT1 can be configured. Then, the InGaAs base layer 24 and the InP collector layer 22 are respectively formed in the base mesa and the collector mesa having almost the same planar shape on whose side faces not a (01-1) equivalent face but a (010) equivalent face is intentionally included. Also, a base electrode 32 is formed with a trapezoidal shape on which the planar shape of the base mesa is reflected. COPYRIGHT: (C)2004,JPO