COMPLEX HEATER

PROBLEM TO BE SOLVED: To provide a complex heater which can provide, at a lower cost, less temperature distribution variation within the surface for heating a workpiece such as a semiconductor wafer and moreover is capable of quickly cooling the workpiece. SOLUTION: The complex heater (1) is formed...

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Bibliographische Detailangaben
1. Verfasser: MORITA NAOTOSHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a complex heater which can provide, at a lower cost, less temperature distribution variation within the surface for heating a workpiece such as a semiconductor wafer and moreover is capable of quickly cooling the workpiece. SOLUTION: The complex heater (1) is formed by joining a disk type ceramic heater (7) and a disk type metal base (9). The ceramic heater (7) is formed of an insulator as the basic material consisting of sintered alumina material, and internal electrodes (11), (13) and a heating generating body (17) are disposed within the ceramic heater (7). The metal base (9) is formed of a metal material mainly formed of aluminum and silica. The ceramic heater (7) and the metal base (9) are integrated through the joining at the entire surface in the main surface side using a brazing material of aluminum. Difference in thermal expansion is set to a value as small as 5ppm/°C or less by using each material as the material of the ceramic heater (7) and the metal base (9). COPYRIGHT: (C)2004,JPO