SEMICONDUCTOR DEVICE OF WAFER LEVEL AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device in which external terminals are rearranged on the electrode pad forming side of a semiconductor chip having such a structure that an Si chip crack or a crack in a solder ball due to a temperature variation is retarded in a state of being mounted on a board and being advantageous with respect to a manufacturing cost, and to provide its manufacturing method. SOLUTION: In the semiconductor device of a wafer level where a conductive post penetrating an insulation layer formed on the electrode pad forming side of a semiconductor chip is provided, and an external connection terminal arranged on the outer side of the insulation layer is connected with the electrode pad through the conductive post or through the conductive post and a wiring layer provided at least on one side or on both sides of the insulation layer connected with the conductive post, the insulation layer is composed of an insulating rubber elastic body, and the conductive post is made of a conductive rubber elastic body. COPYRIGHT: (C)2004,JPO