METHOD OF FORMING OXIDE THIN FILM, AND OXIDE THIN FILM

PROBLEM TO BE SOLVED: To form a good sintered thin film on a thin film-like substrate having a thickness of about 10 μm. SOLUTION: The method of forming the sintered thin film includes a coating process 21 for applying a solution 14 of a sintering raw material on the substrate 15, a calcining proces...

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Bibliographische Detailangaben
Hauptverfasser: IWAI YUTAKA, KANO HARUMI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To form a good sintered thin film on a thin film-like substrate having a thickness of about 10 μm. SOLUTION: The method of forming the sintered thin film includes a coating process 21 for applying a solution 14 of a sintering raw material on the substrate 15, a calcining process 22 for calcining the substrate 15 coated with the solution 14 at a temperature lower than or almost equal to the phase transition temperature of the solution 14 of the sintering raw material, and a final sintering process 24 for firing the substrate 15 coated with the solution 14 at a temperature equal to or higher than the phase transition temperature of the solution 14 of the sintering raw material. After repeating the coating process 21 and the calcining process 22, the sintering layer is fired in the final sintering process 24. COPYRIGHT: (C)2004,JPO