METHOD OF FORMING SELECTION LINE FOR NAND FLASH MEMORY ELEMENT

PROBLEM TO BE SOLVED: To provide a method of forming a selection line for a NAND flash memory, which can improve the electric characteristics by minimizing the voltage drop, while simplifying the forming steps by eliminating the step of removing the dielectric film electrically connecting the floati...

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1. Verfasser:	BOKU HEISHU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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