METHOD AND DEVICE OF GENERATING GROUND WAVE EXCITATION PLASMA AT CONDUCTOR PROXIMITY AREA

PROBLEM TO BE SOLVED: To provide a method and a device of generating ground wave excitation plasma at a conductor proximity area. SOLUTION: The device is provided with a target 16 made of a conductor arranged so that at least its one end come close to a microwave supply opening 12a in a chamber 11,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ONO KOICHI, KAMISAKA HIROYUKI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method and a device of generating ground wave excitation plasma at a conductor proximity area. SOLUTION: The device is provided with a target 16 made of a conductor arranged so that at least its one end come close to a microwave supply opening 12a in a chamber 11, a dielectric window 15 arranged inside the microwave supply opening, a means of initially generating a plasma phase in the vicinity of the surface of the target, and a bias power supply 18 for enlarging a low-electron density sheath area between the plasma phase initially generated by applying a negative bias voltage on the target and the target surface. The generating device of the ground wave excitation plasma is so constructed to apply a plasma treatment on the target itself or on the surface of a processed material 20 when arranged in contact with the plasma phase by the ground wave excitation plasma at an interface between the plasma phase 21 and the low-electron density sheath area. COPYRIGHT: (C)2004,JPO