METHOD OF ERASING NONVOLATILE MEMORY CELL USING SOURCE AND CHANNEL REGIONS

METHOD OF ERASING NONVOLATILE MEMORY CELL USING SOURCE AND CHANNEL REGIONS

PROBLEM TO BE SOLVED: To provide a method of erasing nonvolatile memory cell by which a group of nonvolatile memory cells can be erased collectively without deteriorating a nonvolatile memory. SOLUTION: This method of erasing nonvolatile memory cell includes a step of impressing a first voltage (-8...

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Bibliographische Detailangaben
Hauptverfasser: RABKIN PETER, CHOU KAING, WANG HSINGYA A
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of erasing nonvolatile memory cell by which a group of nonvolatile memory cells can be erased collectively without deteriorating a nonvolatile memory. SOLUTION: This method of erasing nonvolatile memory cell includes a step of impressing a first voltage (-8 V) of a first polarity upon a control gate (406), a step of impressing a second voltage (8 V) of a second polarity upon a bulk region (402), and a step of impressing a third voltage (8 V) of the second polarity upon a source region (408). The magnitude of the second voltage is substantially equal to that of the third voltage. COPYRIGHT: (C)2004,JPO