METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING AMORPHOUS CARBON

PROBLEM TO BE SOLVED: To provide a technology for selectively etching or almost completely peeling a carbon film against a resist film. SOLUTION: An amorphous carbon film 46 is formed on a substrate on which a film to be patterned is formed. A resist pattern 47 is formed on the surface of the amorph...

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Hauptverfasser:	KOBAYASHI MASAHARU, YAO TERUYOSHI, HASHIMOTO KOICHI, NAORI NOBUHISA, OSHIMA MASASHI, KAWAMURA EIICHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a technology for selectively etching or almost completely peeling a carbon film against a resist film. SOLUTION: An amorphous carbon film 46 is formed on a substrate on which a film to be patterned is formed. A resist pattern 47 is formed on the surface of the amorphous carbon film. At least one gas of a group configured of gas containing reducing fluoride gas, halogen gas, and oxygen is used, and the substrate is heated at 70°C to 450°C, and the amorphous carbon film in an area which is not covered with any resist pattern is removed by dry etching. COPYRIGHT: (C)2004,JPO