MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To suppress increase in the film thickness of a base oxide film which is formed on the interface between a gate insulation film and a silicon substrate, when forming the gate insulation film having high dielectric constant. SOLUTION: On a silicon oxide film obtained by the form...

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Bibliographische Detailangaben
Hauptverfasser:	JINRIKI HIROSHI, KUBO KAZUMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To suppress increase in the film thickness of a base oxide film which is formed on the interface between a gate insulation film and a silicon substrate, when forming the gate insulation film having high dielectric constant. SOLUTION: On a silicon oxide film obtained by the formation of an insulation film containing Si and oxygen, a metal oxide film is so deposited by a chemical-vapor-deposition method, using an organic-metal raw material that the metal oxide film becomes crystalline in the state obtained, immediately after the deposition. COPYRIGHT: (C)2004,JPO