METHOD OF REMOVING CONTAMINANT ON SEMICONDUCTOR SUBSTRATE

METHOD OF REMOVING CONTAMINANT ON SEMICONDUCTOR SUBSTRATE

PROBLEM TO BE SOLVED: To provide a method of removing a contaminant on a semiconductor substrate, which can remove a Ge contaminant adherent to the semiconductor substrate. SOLUTION: In order to remove a germanium (Ge) contaminant stuck in a manufacturing process of a semiconductor device, a treatme...

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Bibliographische Detailangaben
1. Verfasser: OGURO SHIZUO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of removing a contaminant on a semiconductor substrate, which can remove a Ge contaminant adherent to the semiconductor substrate. SOLUTION: In order to remove a germanium (Ge) contaminant stuck in a manufacturing process of a semiconductor device, a treatment is performed using a solution containing hafnium (HF) after a treatment using an oxidative solution such as an ammonia-hydrogen peroxide solution (APM), hydrochloric acid-hydrogen peroxide solution (HPM), sulfuric acid-hydrogen peroxide solution (SPM), and aqua regia or oxidation treatment such as oxidative plasma treatment. COPYRIGHT: (C)2004,JPO