SEMICONDUCTOR LIGHT EMITTING DEVICE

PROBLEM TO BE SOLVED: To provide a flip chip semiconductor light emitting device composed of nitride semiconductor wherein heat dissipating property is high and adhesive strength of a light emitting diode and a support is high. SOLUTION: Almost the whole surface of a p-electrode of the light emittin...

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Hauptverfasser: TAKEISHI HIDEMI, KAMEI HIDENORI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a flip chip semiconductor light emitting device composed of nitride semiconductor wherein heat dissipating property is high and adhesive strength of a light emitting diode and a support is high. SOLUTION: Almost the whole surface of a p-electrode of the light emitting diode is bonded to a positive electrode of the support by using conductive material without interposing an insulating film, thereby transmitting heat generated in the vicinity of a light emitting layer directly from the almost whole surface of the p-electrode to the positive electrode of the support, via the conductive material. COPYRIGHT: (C)2004,JPO