METHOD FOR MEASURING AMOUNT OF IMPURITY OF Si WAFER SURFACE

METHOD FOR MEASURING AMOUNT OF IMPURITY OF Si WAFER SURFACE

PROBLEM TO BE SOLVED: To provide a method for measuring the amount of impurities in an Si wafer surface which enables measurement for all Si wafers irrespective of a state of a hydrophobic or hydrophilic Si wafer surface while measurement precision is improved. SOLUTION: A mixed solution 4 of hydrof...

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Bibliographische Detailangaben
Hauptverfasser: SUGIZAKI SHIGEAKI, KON YUKIO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for measuring the amount of impurities in an Si wafer surface which enables measurement for all Si wafers irrespective of a state of a hydrophobic or hydrophilic Si wafer surface while measurement precision is improved. SOLUTION: A mixed solution 4 of hydrofluoric acid and aqua regia is sprayed on the surface of the Si wafer. At least impurities on the surface of the Si wafer are dissolved in an extremely large number droplets of the mixed solution. Each of the droplets in which the impurities are dissolved is gathered and the amount of impurities in the gathered droplets is measured. COPYRIGHT: (C)2004,JPO