COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM FOR LITHOGRAPHY

PROBLEM TO BE SOLVED: To provide an antireflection film composition for lithography having a high antireflection effect, causing no intermixing with a photoresist layer, giving an excellent photoresist pattern, having a high dry etching rate compared to a photoresist and having excellent thermal sta...

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Bibliographische Detailangaben
Hauptverfasser:	ENOMOTO TOMOYUKI, MIZUSAWA KENICHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an antireflection film composition for lithography having a high antireflection effect, causing no intermixing with a photoresist layer, giving an excellent photoresist pattern, having a high dry etching rate compared to a photoresist and having excellent thermal stability. SOLUTION: The composition for formation of an antireflection film contains a polymer compound having an alicyclic structure and an aromatic cyclic or hetero aromatic cyclic structure in the main chain of the unit structure. COPYRIGHT: (C)2004,JPO