SEMICONDUCTOR LIGHT-EMITTING DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device less affected by statics and high in withstand voltage. SOLUTION: This semiconductor light-emitting device comprises positive and negative electrodes 4, 5 formed on the surface of a substrate 3 made of a high-insulation material, such as a ceramic, and a semiconductor light-emitting element 1 whose positive and negative electrodes 1a, 1b are connected to the electrodes 4, 5. The substrate 3 has a through-hole 7 in itself which is filled with a grout 8 which has a specified electrical characteristic. The positive and negative electrodes 4, 5 are connected to each other by the grout 8. The grout 8 is a mixture of an insulating material and a conductive material or of an insulating material and particles formed by coating a highly dielectric material with the conductive material. The grout 8 thus composed forms an impedance bypass circuit, through which static charges accumulated between the electrodes 1a, 1b of the semiconductor light-emitting element 1 are discharged. COPYRIGHT: (C)2004,JPO