SPUTTERING APPARATUS

PROBLEM TO BE SOLVED: To improve a productivity in an inductively coupled high-frequency plasma sputtering apparatus by increasing a film-forming rate. SOLUTION: The apparatus is equipped with a target 2 to which a direct current power or a high-frequency power is fed and a high-frequency coil 3 to...

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Bibliographische Detailangaben
1. Verfasser:	YAMASHITA MUTSUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To improve a productivity in an inductively coupled high-frequency plasma sputtering apparatus by increasing a film-forming rate. SOLUTION: The apparatus is equipped with a target 2 to which a direct current power or a high-frequency power is fed and a high-frequency coil 3 to which the high-frequency power is fed inside a vacuum chamber 1. The apparatus efficiently uses high-density plasma by placing a sputtering surface of the target 2 inside the high-frequency coil 3 having high plasma density. COPYRIGHT: (C)2004,JPO