FILM FORMATION METHOD OF SILICON NITRIDE FILM, FILM FORMATION DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve film thickness uniformity of an obtained nitride film by reducing a use amount of ammonia gas in the film formation of the nitride. SOLUTION: A film formation method of the silicon nitride film forms the silicon nitride film on a substrate 1 by using a catalyser CVD method by using silane gas and the ammonia gas. Gas 5 produced by adding hydrogen gas to the silane gas and the ammonia gas is brought into contact with a catalyser body 6, and then supplied to the substrate. A film formation device 20 is provided with a reaction chamber 10. The inside of the reaction chamber is provided with a substrate holder 2 holding the substrate 1 and the catalyser body 6. The outside of the reaction chamber is provided with gas tanks 11-13 for storing the silane gas, the ammonia gas and the hydrogen gas. Gas piping 15 for connecting the gas tanks and the reaction chamber and a gas supply part 4 for supplying the gas from the gas piping to the inside of the reaction chamber are provided. In the manufacturing device, the gas is brought into contact with the catalyser body from the gas supply part, and then supplied to the substrate to form the silicon nitride film on the substrate 1. COPYRIGHT: (C)2004,JPO