METHOD AND APPARATUS FOR TREATING SUBSTRATE

PROBLEM TO BE SOLVED: To provide a substrate treating method and a substrate treating apparatus that can improve treatment accuracy when treating substrates by discharging a treatment liquid to the substrates, and can effectively utilize the treatment liquid. SOLUTION: In the substrate treating appa...

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Hauptverfasser:	KODAMA MITSUMASA, NAGAO TAKASHI, YOSHIOKA KATSUJI, MATSUNAGA SANENOBU, SUGIMOTO KENJI, SANADA MASAKAZU, AOKI KAORU, YANO MORITAKA, MIHASHI TAKESHI, YAMAMOTO SATOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL APPARATUS SPECIALLY ADAPTED THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a substrate treating method and a substrate treating apparatus that can improve treatment accuracy when treating substrates by discharging a treatment liquid to the substrates, and can effectively utilize the treatment liquid. SOLUTION: In the substrate treating apparatus, the discharge area of a discharge section 7a in a nozzle 7 is not changed, thus preventing a change in the flow rate of a developer Q due to a change in the discharge area, and irregularities in the development of the substrate W due to the change in the flow rate of the developer Q discharged to the substrate W. Additionally, the developer Q discharged to the substrate W from the nozzle 7 is collected by a slender collection port 22 at a collection section 15 oppositely arranged at the lower side of the discharge section 7a of the nozzle 7. As a result, the developer Q is exposed to air only while the developer Q is discharged from the discharged section 7a for reaching the collection ports 22, thus decreasing the exposure of the developer Q to air for reducing a change in the characteristics, and reusing the developer Q for effective utilization. COPYRIGHT: (C)2004,JPO