CHEMICAL MECHANICAL POLISHING PROCESS OF DUAL ORIENTATION POLYCRYSTALLINE MATERIAL

PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing (CMP) process employing chemically active slurry having polarity selected to have an effect on the relative oxidation rate of respective crystal faces of a polished polycrystalline surface. SOLUTION: The polarity of slurry is controlle...

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Bibliographische Detailangaben
Hauptverfasser:	ANTONELL JENNIFER A, HOUGE ERIK CHO, ANTONELL MICHAEL, SIMPSON DARRELL L, MAYNARD RYAN KEITH
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing (CMP) process employing chemically active slurry having polarity selected to have an effect on the relative oxidation rate of respective crystal faces of a polished polycrystalline surface. SOLUTION: The polarity of slurry is controlled to keep the equilibrium of a material removing rate from respective crystal faces during a CMP process. A polar solute may be added to a base solvent in order to obtain a desired polarity. The CMP process of a tungsten thin film normally utilizes aqueous slurry containing an abrasive, an oxidizing agent, and a solute having polarity lower than that of water. Colloidal silica, hydrogen peroxide and benzene may be employed, respectively, as the abrasive, oxidizing agent and solute. COPYRIGHT: (C)2004,JPO