FOCUS POSITION DETECTING METHOD FOR PROJECTION ALIGNER AND PROJECTION EXPOSING METHOD AND MASK

PROBLEM TO BE SOLVED: To precisely detect a focus position at the time of exposing a projection aligner. SOLUTION: A pattern for measurement configured of a reference phase transmitting part 3e and a phase difference transmitting part 3f whose phase difference with the reference position transmittin...

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Bibliographische Detailangaben
Hauptverfasser:	KOMORIYA SUSUMU, NAKADA MASAHIKO, TOMINAGA HIROYASU, TABEI TAKAKAZU, SAKURAI YOSHIHIKO, SUZUKI TAKAHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To precisely detect a focus position at the time of exposing a projection aligner. SOLUTION: A pattern for measurement configured of a reference phase transmitting part 3e and a phase difference transmitting part 3f whose phase difference with the reference position transmitting part 3e is in a degree other than 180° is projection-exposed to the surface of a semiconductor wafer applied with a resist simultaneously with a pattern to be exposed, and developed so that resist patterns for measurement can be formed. The interval of the resist patterns for measurement is measured, and the focus position at the time of exposing of the projection-exposing device is detected from the relative relation of the preliminarily calculated focus position and the interval of the resist patterns for measurement. COPYRIGHT: (C)2004,JPO