METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that is polished without reducing the polishing rate, when conducting polishing by a CMP method using a polishing pad having high hardness. SOLUTION: An oxide film 14, whose peripheral section 14a is thicker than a cen...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YAMAUCHI SHOICHI, URAGAMI YASUSHI, NODA MICHITAKA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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