METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that is polished without reducing the polishing rate, when conducting polishing by a CMP method using a polishing pad having high hardness. SOLUTION: An oxide film 14, whose peripheral section 14a is thicker than a central section and in a convex shape, is formed on a semiconductor wafer 1. Subsequently, patterning is performed on the oxide film 14 by photolithography and an etching process. Then, trenches 2 are formed, and a filling material is formed on the semiconductor wafer including the inside of the trenches 2. Next, the filling material on the semiconductor wafer 1 is polished, using the oxide film 14 as a stopper by the CMP method using the polishing pad of high hardness. At this point, since the peripheral section is into a convex shape, a polished surface is prevented from assuming a convex shape during polishing. Thus, polishing is performed, without making the polishing rate reduced. COPYRIGHT: (C)2003,JPO