BOTTOM SPIN VALVE MAGNETORESISTIVE EFFECT SENSOR ELEMENT AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a bottom spin valve magnetoresistive effect sensor element having a higher magnetoresistive effect ratio and lower resistance as compared with a conventional one, and its manufacturing method. SOLUTION: The bottom SVMR sensor element comprises a mirror surface reflec...

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Hauptverfasser:	NOGUCHI KIYOSHI, SEI SHUKO, KAN CHURYO, MIN RI, SANO MASASHI, KOKU KYOSHU
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MAGNETS MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES METALLURGY PERFORMING OPERATIONS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES TESTING TRANSFORMERS TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a bottom spin valve magnetoresistive effect sensor element having a higher magnetoresistive effect ratio and lower resistance as compared with a conventional one, and its manufacturing method. SOLUTION: The bottom SVMR sensor element comprises a mirror surface reflective layer 22 of iron tantalum oxide (FeTaO) exhibiting excellent mirror surface reflection characteristics of electron. Since the mirror surface reflective layer 22 exists, resistance is decreased and mirror surface reflection characteristics of electron are enhanced significantly as compared with a conventional SVMR sensor element. Consequently, the magnetoresistive effect ratio of a huge magnetoresistive effect is enhanced as compared with a prior art and the element and the method are applicable to a magnetic media having a recording density of about 45-70 Gb/in2. COPYRIGHT: (C)2003,JPO