MAGNETORESISTIVE SWITCH EFFECT ELEMENT AND MAGNETIC SENSING DEVICE USING THE SAME

PROBLEM TO BE SOLVED: To provide a magnetoresistive switch effect element which has a large magnetoresistive switch effect at room temperature, is manufactured through a simple manufacturing process, and formed of materials which are easily accommodated to the semiconductor manufacturing process. SOLUTION: A plurality of conductive regions which are isolated from each other and two electrodes which are separated from each other by a distance of 100 μm or less are formed on a semiconductor region. At least, the adjacent conductive regions are electrically connected with each other via a junction formed of the semiconductor region located between the conducive regions, and the electrodes are electrically connected with each other through the conductive regions and the junctions for forming the magnetoresistive switch effect element. COPYRIGHT: (C)2003,JPO