METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To flatten a BPSG film by a chemical mechanical polishing method and to suppress microscratches. SOLUTION: The BPSG film 20 is deposited on the principal surface of a substrate 1 where a MISFET is formed. Then, the surface of the BPSG film 20 is flattened by a chemical mechanical polishing method. Thereafter, by reflowing the BPSG film 20 by heat-treating the substrate 1, microscratches generated on the surface of the BPSG film 20 from the polishing of the film 20 are removed. The amount of polishing the surface of the BPSG film 20 is not less than 90 nm and not more than 300 nm, preferably not less than 100 nm and not more than 250 nm, and more preferably not less than 120 nm and not more than 200 nm. COPYRIGHT: (C)2003,JPO