METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide, at low costs, a bipolar transistor having the excellent high frequency characteristic by forming a SIC layer having the predetermined retro-grade profile with the simplified process and by reducing a junction capacitance between the base and collector in the method...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: YUKI KOICHIRO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide, at low costs, a bipolar transistor having the excellent high frequency characteristic by forming a SIC layer having the predetermined retro-grade profile with the simplified process and by reducing a junction capacitance between the base and collector in the method of manufacturing the bipolar transistor including the SIC layer. SOLUTION: In the emitter aperture window forming process, immediately after a SiO2layer is removed with the dry etching method using a resist mask, the phosphorus ion is implanted into an Si substrate through the IBDP layer, SiO2layer and Si/SiGe layer using the same resist mask. COPYRIGHT: (C)2003,JPO