NONVOLATILE MEMORY AND MEMORY CARD

PROBLEM TO BE SOLVED: To enhance a sequential access performance in handling data having a size larger than a sector size which is a unit of writing to a memory bank. SOLUTION: A nonvolatile memory 1 is equipped with a plurality of erasable and writable nonvolatile memory cells and has a plurality of memory banks (BNK0-BNKn) each of which can perform memory operation independently. After inputting a write indication command, a write start address, and the number of write process domains from a starting point of the above write start address, the memory 1 can receive the write data and the write start commands corresponding to the number of the write process domains. Write data for one write process domain is latched for one memory bank, and write to the memory cell is started in response to a write start command. A latch operation in one memory bank and write to a memory cell in other memory bank can be arranged in a line. COPYRIGHT: (C)2003,JPO