METHOD FOR EVALUATING SILICON WAFER AND ETCHING AGENT THEREFOR

PROBLEM TO BE SOLVED: To provide a method for evaluating a silicon wafer and an etching agent therefor in which an entire surface of a wafer plane can promptly and accurately be measured safely, simply at low costs. SOLUTION: In a method for evaluating a silicon wafer, an etching agent has a capacity ratio of fluoric acid, nitric acid, acetic acid and water in the etching agent of (400):(2 to 4):(10 to 50):(80) and contains iodine or an iodic compound. A silicon wafer is dipped in the etching agent to etch selectively a crystal defect, and a wavelet pattern appeared on a surface of the silicon wafer is detected. In the etching agent, the etching agent has a capacity ratio of fluoric acid, nitric acid, acetic acid and water in the etching agent of (400):(2 to 4):(10 to 50):(80) and the iodine or iodic compound contains 0.03 g or more per total liquid measure 1 L of the etching agent. COPYRIGHT: (C)2003,JPO