METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE EQUIPPED WITH METALLIC SUBSTRATE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which a metallic substrate is provided to improve reliability and service life of the semiconductor device by its high thermal conductivity. SOLUTION: This method of manufacturing the semiconductor device equipped w...

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Hauptverfasser:	CHIN DAIKEN, CHIN KENAN, EKI DAIKAN, SHU GENKIN, GO HAKUJIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which a metallic substrate is provided to improve reliability and service life of the semiconductor device by its high thermal conductivity. SOLUTION: This method of manufacturing the semiconductor device equipped with the metallic substrate includes at least following steps: providing a semiconductor substrate as a temporary substrate; forming at least one semiconductor layer on the semiconductor substrate; forming the metallic substrate on the semiconductor layer, and removing the semiconductor substrate finally. The high thermal conductivity of the metallic substrate improves the reliability and service life of the semiconductor device. COPYRIGHT: (C)2003,JPO