SELF-INTERSTITIAL DOMINATED SILICON HAVING LOW DEFECT DENSITY

PROBLEM TO BE SOLVED: To provide a single crystal silicon in an ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and to provide a method of producing the same. SOLUTION: The method of growing the single crystal silicon ingot comprises controlling (i) a growth velocity v, (ii) an average axial temperature gradient G0, during the growth of the constant diameter portion of the crystal over the temperature range from solidification temperature to a temperature of ≥about 1,325°C, and (iii) the cooling rate of the crystal from the solidification temperature to about 1,050°C, to cause the formation of an axially symmetrical segment which is substantially free of agglomerated intrinsic point defects. COPYRIGHT: (C)2003,JPO