GALLIUM NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

PROBLEM TO BE SOLVED: To provide a gallium nitride semiconductor light emitting element which has a more uniform characteristic by improving productivity, reducing the occurrence of a crack at the time of forming a film and reducing the warp of a whole wafer (sapphire substrate). SOLUTION: The gallium nitride semiconductor light emitting element includes a PN junction formed on an insulating substrate. The PN junction formed of a Mg doped GaN semiconductor layer 600 and a Si doped GaN semiconductor layer 300, which are in lower parts of wire bonding metal electrodes 910 and 920, are electrically separated from a PN junction contributing to the emission of light. The film thickness of the GaN semiconductor layer is set to be 2.5 μm or less. COPYRIGHT: (C)2003,JPO