METHOD FOR FORMING SILICON FILM AND COMPOSITION THEREFOR

PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor thin film easily and in an inexpensive way, the method not requiring expensive, energy-intensive, large-scale equipment, and being applicable to a large-area substrate, and to provide a silane composition therefor. SOLUTION: A sol...

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Bibliographische Detailangaben
Hauptverfasser:	SHIHO KOUJI, KATO HITOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL PAINT OR INK REMOVERS CHEMISTRY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS COMPOUNDS THEREOF CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILLING PASTES INKS INORGANIC CHEMISTRY METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-METALLIC ELEMENTS ORGANIC MACROMOLECULAR COMPOUNDS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING POLISHES SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor thin film easily and in an inexpensive way, the method not requiring expensive, energy-intensive, large-scale equipment, and being applicable to a large-area substrate, and to provide a silane composition therefor. SOLUTION: A solar battery with a structure having, between a pair of electrodes, at least two laminated semiconductor thin film layers having different impurity concentrations and/or different kind of impurities, is manufactured by forming at least one of the semiconductor thin film layers according to the method comprising the steps of forming a coating film by applying onto the substrate a silane composition comprising (A) a polysilane compound represented by the formula: SinRm, (B) at least one type of silane compound selected from the group consisting of cyclopentasilane, cyclohexasilane and silylcyclopentasilane, (C) silicon particles, and optionally, (D) a boron compound, an arsenic compound, a phosphorus compound, an antimony compound and a modified silane compound, and by thermally and/or optically processing the coating film. COPYRIGHT: (C)2003,JPO