VAPOR DEPOSITION METHOD AND APPARATUS

PROBLEM TO BE SOLVED: To provide a vapor deposition method and a vapor deposition apparatus that can simultaneously achieve a decrease in a film formation temperature and a film formation speed, and at the same time can improve microloading when forming a film for containing a nitrogen atom such as a nitride film on a substrate by a CVD method. SOLUTION: In a CVD apparatus 1, a gas supply system 30 is connected to a chamber 2 where a wafer W is accommodated, and further a gas supply system 40 is connected via an RP system active species generation section 60 due to microwave discharge. An NH3gas that is supplied to an applicator 61 at the active species generation section 60 from a gas supply source 41 of the gas supply system 40 is decomposed and dissociated by plasma due to the microwave discharge, and active species resulting from the NH3gas are generated. Gas containing the active species is mixed with an SiH4gas from a gas supply source 32 of the gas supply system 30, and is supplied onto the wafer W in the chamber 2. A silicon nitride film is formed by heating the wafer W. COPYRIGHT: (C)2003,JPO